Memory interface circuit and semiconductor device

ABSTRACT

There is a need to provide a small-sized memory interface circuit capable of adjusting timing between a strobe signal and a data signal without interrupting a normal memory access. 
     An expected value acquisition latch latches write data in synchronization with a clock signal. A WDLL outputs a write strobe signal WDQS. An RDLL outputs a delayed write strobe signal WDQS_d. A read data latch latches looped-back write data in synchronization with the delayed write strobe signal WDQS_d. A comparator compares the read data latch with an output from the expected value acquisition latch. A register portion stores a delay value to be placed in the RDLL. A register control portion updates a delay value in the register portion in accordance with a comparison result. A delay selection portion places a delay value read from the register portion in the RDLL.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/272,856, filed Oct. 13, 2011, which claims benefit of priority fromthe prior Japanese Application No. 2010-247398, filed on Nov. 14, 2010;the entire contents of all of which are incorporated herein byreference.

BACKGROUND

The present invention relates to a memory interface circuit and asemiconductor device. More particularly, the invention relates to amemory interface circuit and a semiconductor device that adjust timingsduring normal memory access operations.

Recent computer systems use SDRAM (Synchronous Dynamic Random AccessMemory) in order to respond to increased processes. Specifically,high-speed memory devices such as DDR2 (Double-Data-Rate2) SDRAM andDDR3 SDRAM are used. For example, DDR3 SDRAM inputs or outputs a datasignal in synchronization with the rise or fall of a strobe signal.

The system mounted with such a memory device is subject to a timingdifference between the strobe signal and the data signal due to a systemstate change in the temperature or voltages. The timing differencecauses a data signal to be acquired unsuccessfully. To solve thisproblem, DDR3 SDRAM stops normal memory access operations such aswriting and reading and frequently performs calibration that adjusts thetiming between the strobe signal and the data signal. However, thecalibration disables data wiring or reading and hinders high-speed datainput/output.

To solve the problem, Japanese Patent Application Publication No.2010-86415 proposes a memory interface that adjusts the timing between astrobe signal and a data signal during normal memory access operations.FIG. 24 is a function block diagram exemplifying a memory interface thatadjusts the timing between a strobe signal and a data signal duringnormal memory access operations.

A memory system 1100 includes a memory device 1101 and a memoryinterface 1102. The memory device 1101 and the memory interface 1102 arecoupled to each other at least through a data signal line 1112 and astrobe signal line 1113.

The memory device 1101 may be SDR (Single Data Rate) SDRAM or DDR(Double Data Rate) SDRAM. The SDR SDRAM latches data based on either therising edge or the falling edge of a strobe signal. The DDR SDRAMlatches data based on both the rising edge and the falling edge of astrobe signal.

The following describes a configuration and operations relating toeither the rising edge or the falling edge of a strobe signal forsimplicity.

Generally, the data signal line 1112 is bidirectional and is used totransfer data written to the memory device 1101 from the memoryinterface 1102 and data read from the memory device 1101. While FIG. 24shows one data signal line, multiple data signal lines may be usedcorresponding to the strobe signal line 1113.

The strobe signal line 1113 is used to output a write strobe signal tothe memory device 1101 from the memory interface 1102 when the memoryinterface 1102 writes data to the memory device 1101. The strobe signalline 1113 is used to output a read strobe signal to the memory interface1102 from the memory device 1101 when the memory interface 1102 readsdata from the memory device 1101. The strobe signal line 1113 isgenerally bidirectional.

The memory interface 1102 includes a first data latch portion 1103, afirst variable delay portion 1104, a first delay control portion 1105, asecond data latch portion 1106, a second variable delay portion 1107, asecond delay control portion 1108, a comparator 1109, a delaydetermination portion 1110, a toggle detector 1111, and a directioncontrol portion 1114.

If DDR SDRAM is used for the memory device 1101, one strobe signal line1113 may be provided with two sets of the components of the memoryinterface 1102 corresponding to the rising edge and the falling edge ofa strobe signal. The timing can be independently adjusted for the risingedge and the falling edge of a strobe signal.

As described above, the data signal line 1112 is generallybidirectional. The direction control portion 1114 controls the datasignal line 1112 in a direction of transferring write data 1115 from anapplied device and in a direction of transferring read data to the firstdata latch portion 1103 and the second data latch portion 1106.

The applied device is equivalent to a circuit that uses the memorydevice 1101 via the memory interface 1102. The invention does not limitfunctions of the applied device. The applied device receives read data1116 from the memory interface 1102. The applied device may be providedas a CPU (central processing unit) as an example.

The first data latch portion 1103 latches data transferred through thedirection control portion 1114 using a strobe signal that is transferredfrom the strobe signal line 1113 and is delayed in the first variabledelay portion 1104. The latched information is not only transferred tothe applied device but also transferred to the comparator 1109.

The second data latch portion 1106 latches data transferred through thedirection control portion 1114 using a strobe signal that is transferredfrom the strobe signal line 1113 and is delayed in the second variabledelay portion 1107. The latched information is transferred to not onlythe comparator 1109 but also the toggle detector 1111.

The first variable delay portion 1104 adjusts the timing of a strobesignal transferred through the strobe signal line 1113 in relation to adata signal transferred to the first data latch portion 1103 through thedata signal line 1112 and the direction control portion 1114. The firstvariable delay portion 1104 includes a delay line capable of changing adelay amount. The delay line can adjust the timing.

The second variable delay portion 1107 adjusts the timing of a strobesignal transferred through the strobe signal line 1113 in relation to adata signal transferred to the second data latch portion 1106 throughthe data signal line 1112 and the direction control portion 1114. Thesecond variable delay portion 1107 includes a delay line capable ofchanging a delay amount. The delay line can adjust the timing.

The first delay control portion 1105 is supplied with a delay settingamount from the delay determination portion 1110 and accordinglycalculates an adjustment amount for the delay line included in the firstvariable delay portion 1104 to configure the first variable delayportion 1104.

The second delay control portion 1108 is supplied with a delay settingamount from the delay determination portion 1110 and accordinglycalculates an adjustment amount for the delay line included in thesecond variable delay portion 1107 to configure the second variabledelay portion 1107.

The comparator 1109 compares the value of data latched in the first datalatch portion 1103 with the value of data latched in the second datalatch portion 1106 and supplies a comparison result to the delaydetermination portion 1110.

The delay determination portion 1110 records the result from thecomparator 1109, the delay setting amount for the first delay controlportion 1105, and the delay setting amount for the second delay controlportion 1108 at that time. This record is used to appropriately updateand set the delay setting amounts for the first delay control portion1105 and the second delay control portion 1108.

In the memory system 1100, the previously calibrated first data latchportion 1103 latches read data in synchronization with the strobe signaldelayed through the first variable delay portion 1104. The second datalatch portion 1106 latches read data in synchronization with the strobesignal delayed through the second variable delay portion 1107. An outputvalue from the first data latch portion 1103 is compared with the seconddata latch portion 1106 at the timing an output from the first datalatch portion 1103 toggles.

Let us suppose that the output value from the first data latch portion1103 is equal to that from the second data latch portion 1106. In thiscase, the second delay control portion 1108 adjusts the delay amount inthe second variable delay portion 1107 so as to increase a differencefrom the delay amount in the first variable delay portion 1104. Theadjustment continues until the output value from the first data latchportion 1103 becomes unequal to that from the second data latch portion1106. It is possible to find the delay amount as a criterion todetermine whether the output value from the first data latch portion1103 is equal or unequal to that from the second data latch portion1106.

Let us suppose that the output value from the first data latch portion1103 is unequal to that from the second data latch portion 1106. In thiscase, the second delay control portion 1108 adjusts the delay amount inthe second variable delay portion 1107 so as to decrease a differencefrom the delay amount in the first variable delay portion 1104. Theadjustment continues until the output value from the first data latchportion 1103 becomes equal to that from the second data latch portion1106. It is possible to find the delay amount as a criterion todetermine whether the output value from the first data latch portion1103 is equal or unequal to that from the second data latch portion1106.

A delay amount plus safety allowance is calculated with reference to thedelay amount as a criterion to determine whether the output value fromthe first data latch portion 1103 is equal or unequal to that from thesecond data latch portion 1106. The first delay control portion 1105supplies the first variable delay portion 1104 with the delay amountplus safety allowance during a refresh operation generally performed inthe DRAM. This makes it possible to update the delay amount to besupplied to the first variable delay portion 1104. As a result, thetiming between a strobe signal and a data signal can be adjusted withoutrepetition of the calibration.

Japanese Patent Application Publication No. 2010-26896 proposes a memorysystem that adjusts the timing between a strobe signal and a data signalusing a phase interpolator.

SUMMARY

However, the memory interface as disclosed in Japanese PatentApplication Publication No. 2010-86415 includes the blocks that onlyadjust the delay amount for the first variable delay portion 1104. Thatis, the second data latch portion 1106, the second variable delayportion 1107, the second delay control portion 1108, the comparator1109, the delay determination portion 1110, and the toggle detector 1111function only in order to adjust the delay amount for the first variabledelay portion 1104, not to write or read data. In other words, thememory interface as disclosed in Japanese Patent Application PublicationNo. 2010-86415 needs to install a block that is independent of datawriting or reading. As a result, the memory interface circuit scaleincreases. This causes a bottleneck to the memory systemminiaturization.

The memory system disclosed in Japanese Patent Application PublicationNo. 2010-26896 also needs to install a phase interpolator that isindependent of data writing or reading. Accordingly, the memory systemis subject to the same problem as with the above-mentioned memoryinterface.

According to an aspect of the present invention, a memory interfacecircuit includes: a data output buffer that outputs write data receivedfrom outside during writing to a memory device; a write delay-lockedloop that outputs a write strobe signal to the memory device through astrobe signal output buffer, wherein the write strobe signal isgenerated by delaying a phase of a clock signal received from outsideduring writing; a first latch that latches the write data from theoutside in synchronization with the clock signal; a data input bufferthat outputs read data received from the memory device during reading; aread delay-locked loop that outputs a delayed read strobe signalgenerated by delaying a phase of a read strobe signal received from thememory device through a strobe signal input buffer during reading andoutputs a delayed write strobe signal generated by delaying a writestrobe signal looped back from the strobe signal output buffer throughthe strobe signal input buffer during writing; a second latch thatlatches the read data from the data input buffer during reading insynchronization with the delayed read strobe signal and latches thewrite data looped back from the data output buffer through the datainput buffer during writing in synchronization with the delayed writestrobe signal; a comparator that compares output from the first latchwith output from the second latch during writing and outputs acomparison result as a comparison result signal; a register portion thatstores a delay value to be supplied to the read delay-locked loop inorder to delay one of the write strobe signal and the read strobesignal; a register control portion that updates the delay value storedin the register portion in accordance with the comparison result signal;and a delay selection portion that is controlled by the register controlportion and supplies the read delay-locked loop with the delay valuestored in the register portion.

The memory interface circuit loops back the write data and can therebyoptimize a read delay value during writing while the value is suppliedto the read delay-locked loop during reading. Accordingly, the memoryinterface circuit need not frequently perform calibration whileinterrupting a normal memory access operation during writing or reading.There is no need to provide an excess circuit that might be used onlyfor the calibration because the memory interface circuit uses theloopback operation during writing. As a result, it is possible toprovide a small-sized memory interface circuit capable of adjustingtiming between a strobe signal and a data signal without interrupting anormal memory access.

The present invention can provide a small-sized memory interface circuitcapable of adjusting timing between a strobe signal and a data signalwithout interrupting a normal memory access.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit block diagram showing a configuration of asemiconductor device including a memory interface circuit according to afirst embodiment of the invention;

FIG. 2 shows relation between values in a register file and comparisonresults from a loopback test for a comparator according to the firstembodiment;

FIG. 3 is a flowchart showing operations of the memory interface circuitaccording to the first embodiment;

FIG. 4 is a flowchart showing operations in an initialization phaseaccording to the first embodiment;

FIG. 5 is a flowchart showing operations in a first initializationprocess according to the first embodiment;

FIG. 6 is a timing chart exemplifying signal timings in the firstinitialization process according to the first embodiment;

FIG. 7 is a flowchart showing operations in a second initializationprocess according to the first embodiment;

FIG. 8 is a timing chart exemplifying signal timings in the secondinitialization process according to the first embodiment;

FIG. 9 is a flowchart showing operations in a third initializationprocess according to the first embodiment;

FIG. 10 is a flowchart showing operations in a first phase according tothe first embodiment;

FIG. 11 is a flowchart showing operations in a second phase according tothe first embodiment;

FIG. 12 is a flowchart showing operations in a third phase according tothe first embodiment;

FIG. 13 is a flowchart showing operations in a fourth phase according tothe first embodiment;

FIG. 14 is a circuit block diagram showing a configuration of asemiconductor device including a memory interface circuit according to asecond embodiment;

FIG. 15 is a flowchart showing operations of the memory interfacecircuit according to the second embodiment;

FIG. 16 is a flowchart showing operations in an initialization phaseaccording to the second embodiment;

FIG. 17 is a flowchart showing operations in a first initializationprocess according to the second embodiment;

FIG. 18 is a timing chart exemplifying signal timings in the firstinitialization process according to the second embodiment;

FIG. 19 is a flowchart showing operations in a first phase 211 accordingto the second embodiment;

FIG. 20 is a flowchart showing operations in a second phase 212according to the second embodiment;

FIG. 21 is a circuit block diagram showing a configuration of asemiconductor device including a memory interface circuit according to athird embodiment;

FIG. 22 is a flowchart showing operations of the memory interfacecircuit according to the third embodiment;

FIG. 23 is a block diagram showing a configuration of a memory systemaccording to a fourth embodiment; and

FIG. 24 is a function block diagram exemplifying a memory interface thatadjusts timings between a strobe signal and a data signal during anormal memory access operation.

DETAILED DESCRIPTION

Embodiments of the present invention will be described in further detailwith reference to the accompanying drawings. The same parts orcomponents are depicted by the same reference numerals and a duplicatedescription is omitted as needed.

First Embodiment

The memory interface circuit according to the first embodiment will bedescribed. The first embodiment describes an example of using DDR3SDRAM. FIG. 1 is a circuit block diagram showing a configuration of asemiconductor device 120 including a memory interface circuit 100according to a first embodiment of the invention. The semiconductordevice 120 includes the memory interface circuit 100 and an externalcircuit 110. The semiconductor device 120 is coupled to an externalmemory device 130 and functions as a memory controller. As describedabove, the embodiment uses DDR3 SDRAM as the memory device 130. Thememory interface circuit 100 mediates data exchange between the externalcircuit 110 and the memory device 130.

The configuration of the memory interface circuit 100 will be describedin detail. The input to a write data output buffer 21 is coupled to theexternal circuit 110 through a write data signal line 51. The outputfrom the write data output buffer 21 is coupled to the input to a readdata input buffer 22 and a data terminal 61. The data terminal 61 iscoupled to the memory device 130 through one or more data signal lines71. The output from the read data input buffer 22 is coupled to theinput to a read data latch 11. The output from the read data latch 11 iscoupled to the external circuit 110 through a read data signal line 52.

The input to a write delay-locked loop (WDLL) 31 is coupled to theexternal circuit 110 through a clock signal line 53. The output from theWDLL 31 is coupled to the input to a strobe signal output buffer 23. Theoutput from the strobe signal output buffer 23 is coupled to the inputto a strobe signal input buffer 24 and a strobe terminal 62. The strobeterminal 62 is coupled to the memory device 130 through one or morestrobe signal lines 72. The output from the strobe signal input buffer24 is coupled to the input to a read delay-locked loop (RDLL) 32. Theoutput from the RDLL 32 is coupled to the enable input to the read datalatch 11.

The WDLL 31 outputs a write strobe signal WDQS with a 90-degree delay inthe phase of an input clock signal CLK. The RDLL 32 outputs a signal bydelaying the phase of an input signal.

The input to an expected value acquisition latch 12 is coupled to theexternal circuit 110 through the write data signal line 51. The enableinput to the expected value acquisition latch 12 is coupled to theexternal circuit 110 through the clock signal line 53.

The comparator 41 has two inputs. One input to the comparator 41 iscoupled to the output (result value val1) from the read data latch 11.The other input to the comparator 41 is coupled to the output (expectedvalue val2) from the expected value acquisition latch 12. A comparisonresult from the comparator 41 is output as a comparison result signal 46to a register control portion 42. The register control portion 42outputs a control signal to a register portion 43 or a delay selectionportion 44 in accordance with the comparison result signal 46 or a delaycontrol signal DCS input through a delay control signal line 54.

The register portion 43 stores a register file 45. The register file 45contains a left loopback fail value tA, a left loopback slot tB, a rightloopback slot tC, a right loopback fail value tD, an estimated left slotvalue tE, an estimated right slot value tF, and a read delay value tG.These values will be described later in terms of their roles and how todetermine them. A control signal S1 from the register control portion 42initializes or updates the values tA through tG in the register file 45.To monitor the values tA through tG in the register file 45, theexternal circuit 110 reads the values tA through tG from the registerfile 45 as a delay monitor signal DMS through a delay monitor signalline 55.

The delay selection portion 44 reads any one of the values tA through tGin the register file 45 from the register portion 43 in accordance withthe control signal S2 from the register control portion 42. The delayselection portion 44 sets the read value as a delay amount for the RDLL32. The RDLL 32 supplies a signal input to the RDLL 32 with the delayamount (any one of the values to through tG in the register file 45) setby the delay selection portion 44.

The following describes an overview of write and read operations of thememory interface circuit 100. First, a read operation will be described.During a read operation, the memory device 130 outputs read data RD tothe read data input buffer 22. The read data RD is read at the samefrequency as a data rate. The read data RD is output as a data signalwhose burst length is 8, for example.

The memory device 130 supplies the RDLL 32 with a read strobe signalRDQS through the strobe signal input buffer 24. The read strobe signalRDQS is supplied at the same frequency as the data rate. The read strobesignal RDQS is supplied as a differential read strobe signal, forexample. For ease of description, FIG. 1 illustrates the read strobesignal RDQS as one signal.

The RDLL 32 outputs a delayed read strobe signal RDQS_d to the read datalatch 11. The delayed read strobe signal RDQS_d is equivalent to theread strobe signal RDQS supplied with a read delay value tG. The readdelay value tG is previously given to the RDLL 32.

The read data latch 11 latches the read data RD in synchronization withthe delayed read strobe signal RDQS_d. The read data latch 11 outputsthe latched read data RD to the external circuit 110. In this manner,data is read from the memory device 130.

Second, a write operation will be described. During a write operation,the external circuit 110 supplies write data WD to the memory device 130through the write data output buffer 21. The external circuit 110supplies the clock signal CLK to the WDLL 31. The WDLL 31 outputs thewrite strobe signal WDQS with a 90-degree delay in the phase of theinput clock signal CLK to the memory device 130. The write data WD iswritten to the memory device 130 in synchronization with the writestrobe signal WDQS.

The write data WD is looped back to the read data latch 11 through theread data input buffer 22. The write strobe signal WDQS is input to theRDLL 32 through the strobe signal input buffer 24. The RDLL 32 generatesa delayed write strobe signal WDQS_d by supplying the write strobesignal WDQS with any one of the values to through tF in the registerfile 45. The delayed write strobe signal WDQS_d is output to the readdata latch 11.

The read data latch 11 latches the looped-back write data WD insynchronization with the delayed write strobe signal WDQS_d. The readdata latch 11 outputs the latched write data WD as the result value val1to the comparator 41.

The expected value acquisition latch 12 latches the write data WD insynchronization with the clock signal CLK. The expected valueacquisition latch 12 outputs the latched write data WD as the expectedvalue val2 to the comparator 41.

The comparator 41 compares the result value val1 with the expected valueval2. The comparator 41 determines whether the result value val1 isequal to the expected value val2 (hereafter denoted as PASS) or isunequal to the same (hereafter denoted as FAIL). The comparator 41outputs the comparison result signal 46 to the register control portion42. The register control portion 42 determines a delay value to besupplied to the RDLL 32 by operating the register portion 43 and thedelay selection portion 44 in accordance with the comparison resultsignal 46.

In other words, the memory interface circuit 100 compares thelooped-back write data WD (result value val1) with the non-looped-backwrite data WD (expected value val2). Theoretically, the result valueval1 is equal to the expected value val2 since the same data is comparedwith each other. However, the looped-back write data WD needs to travelan extra path from the read data input buffer 22 to the read data latch11.

The read path state varies with a temperature change in thesemiconductor device 120. The variation might deviate the latch timingfor the read data latch 11. In other words, the delayed read strobesignal RDQS_d supplied from the RDLL 32 might have an improper phase. Insuch a case, it is just necessary to adjust the delay value supplied tothe RDLL 32 and supply a proper delayed read strobe signal RDQS_d. Thememory interface circuit 100 can adjust the delay value supplied to theRDLL 32 in accordance with a comparison result (comparison result duringthe loopback operation) between the result value val1 and the expectedvalue val2. The delay value for the RDLL 32 can be adjusted using notonly the write data WD but also test data supplied through the same pathas that for the write data WD.

The following describes roles of the values tA through tG in theregister file according to the first embodiment. The values tA throughtG in the register file 45 will be described first. The memory interfacecircuit 100 determines the values tA through tG in the register file 45using a loopback operation of write data WD during a write operation(hereafter referred to as a loopback test).

FIG. 2 shows relation between the values tA through tD in the registerfile 45 and comparison results from a loopback test for the comparator41. The comparison result from the comparator 41 varies with a delayvalue supplied to the RDLL 32 during the loopback test. A period D3ensures a delay value that makes the result value val1 and the expectedvalue val2 equal to each other in all the loopback tests (hereafterdenoted as ALL-PASS). All the loopback operations result in PASS whenthe RDLL 32 is supplied with the delay value within the period D3.

Results of the loopback test will be described. The following exampleassumes that the DDR3 SDRAM is supplied with the write data WD as a datasignal with burst length 8. The data signal with burst length 8 containsdata of consecutive eight bits. The comparator 41 compares the resultvalue val1 with the expected value val2 for each of the eight bits.Accordingly, the comparator 41 performs the comparison on the 8-bit dataeight times.

Supposing that data with burst length 8 is equivalent to one set,multiple sets of write data are supplied. If four sets of data aresupplied, for example, the comparator 41 compares the result value val1with the expected value val2 for each of 32 bits, that is, 8 (burstlength) multiplied by 4 (the number of sets). As a result, thecomparator 41 performs the comparison 32 times for the supplied 32-bitdata.

The comparator 41 compares the result value val1 with the expected valueval2 for each bit of the supplied write data WD. If the write data WDcontains 32 bits as described in the example above, ALL-PASS signifiesthat the result value val1 always becomes equal to the expected valueval2 in 32 comparison operations.

Similarly, in the following description, ALL-FAIL signifies that theresult value val1 always becomes unequal to the expected value val2 in32 comparison operations. ONE-FAIL signifies that at least onecomparison result becomes FAIL and the other comparison results becomePASS as a result of 32 comparison operations on a region near theALL-PASS region. ONE-PASS signifies that at least one comparison resultbecomes PASS and the other comparison results become FAIL as a result of32 comparison operations on a region near the ALL-FAIL region.

There has been described the example where the write data WD is suppliedas the data signal with burst length 8. However, the mode of supplyingthe write data WD is not limited thereto. The write data WD can besupplied in any burst length. Any number of sets of data can besupplied. The above-mentioned example is applicable to not only thewrite data WD but also test data and the read data RD supplied throughthe same route as that for the write data WD.

Periods D1 and D5 ensure a delay value that always causes an unequalcomparison result between the result value val1 and the expected valueval2 in all the loopback tests. In other words, all the loopbackoperations become FAIL if the RDLL 32 is supplied with a delay valuewithin the period D1 or D5.

Periods D2 and D4 ensure a delay value that causes comparison results ofPASS and FAIL in loopback tests. That is, loopback operations mightbecome PASS or FAIL if the RDLL 32 is supplied with a delay value withinthe period D2 or D4. Contingency affects a comparison result during theperiods D2 and D4. Signal fluctuation due to jitters mainly causes thecontingency.

The left loopback fail value tA provides the maximum delay value in theperiod D1. The comparator 41 causes the comparison result to be ALL-FAILif the RDLL 32 is supplied with the left loopback fail value tA as thedelay value during the loopback operation. Accordingly, the comparisonresult of ALL-FAIL is unavailable if the RDLL 32 is supplied with adelay value one step later than the left loopback fail value tA. Onestep signifies the minimum adjustment division in a delay value suppliedto the RDLL 32.

The left loopback slot tB provides the minimum delay value in the periodD3. The comparator 41 causes the comparison result to be ALL-PASS if theRDLL 32 is supplied with the left loopback slot tB as the delay valueduring the loopback operation. Accordingly, the comparison result ofALL-PASS is unavailable if the RDLL 32 is supplied with a delay valueone step earlier than the left loopback slot tB.

The right loopback slot tC provides the maximum delay value in theperiod D3. The comparator 41 causes the comparison result to be ALL-PASSif the RDLL 32 is supplied with the right loopback slot tC as the delayvalue during the loopback operation. Accordingly, the comparison resultof ALL-PASS is unavailable if the RDLL 32 is supplied with a delay valueone step earlier than the right loopback slot tC.

The right loopback fail value tD provides the minimum delay value in theperiod D5. The comparator 41 causes the comparison result to be ALL-FAILif the RDLL 32 is supplied with the right loopback fail value tD as thedelay value during the loopback operation. Accordingly, the comparisonresult of ALL-FAIL is unavailable if the RDLL 32 is supplied with adelay value one step earlier than the right loopback fail value tD.

The estimated left slot value tE and the estimated right slot value tFwill be described. Normal calibration provides the estimated left slotvalue tE and the estimated right slot value tF. The calibrationpreviously writes test data and reads the written test data. Thecalibration compares the written test data with the read data todetermine the estimated left slot value tE and the estimated right slotvalue tF.

Specifically, when reading the written test data, the read data latch 11latches the read test data in synchronization with the delayed readstrobe signal RDQS_d supplied from the RDLL 32. The comparison resultfrom the comparator varies with a delay value supplied to the RDLL 32.The calibration always causes the comparison result to be ALL-PASS ifthe RDLL 32 is supplied with a delay value within the proper range. Onthe other hand, the comparison might result in FAIL if the RDLL 32 issupplied with a delay value outside the proper range.

The estimated left slot value tE provides the minimum delay value thatallows the calibration to result in ALL-PASS. The comparator 41 causesthe comparison result to be ALL-PASS if the RDLL 32 is supplied with theestimated left slot value tE as the delay value during the calibration.

The estimated right slot value tF provides the maximum delay value thatallows the calibration to result in ALL-PASS. The comparator 41 causesthe comparison result to be ALL-PASS if the RDLL 32 is supplied with theestimated right slot value tF as the delay value during the calibration.

The estimated left slot value tE and the estimated right slot value tFindicate the lower limit and the upper limit of delay values capable ofproperly reading data from the memory device 130. The same also appliesto an operation of reading the read data RD. In other words, theestimated left slot value tE and the estimated right slot value tFindicate the lower limit and the upper limit of delay values capable ofproperly reading the read data RD from the memory device 130.

The read delay value tG will be described. The read delay value tG iscalculated based on the estimated left slot value tE and the estimatedright slot value tF. According to the embodiment, the read delay valuetG is configured to be intermediate between the estimated left slotvalue tE and the estimated right slot value tF. Therefore, the read dataRD can be properly read if the RDLL 32 is supplied with the read delayvalue tG during reading.

Signaling properties of the semiconductor device 120 are influenced by astate change such as a temperature change in the semiconductor device120 or the memory device 130. The read delay value tG needs to beadjusted as appropriate in order to continuously read the appropriateread data RD under the environment subject to state changes.

The memory interface circuit 100 determines tA through tD using theloopback test during writing in order to adjust the read delay value tG.The memory interface circuit 100 calculates the estimated left slotvalue tE and the estimated right slot value tF based on the values tAthrough tD. The read delay value tG is updated accordingly based on theloopback test during writing.

The following describes in detail the method of determining the valuestA through tG in the register file. FIG. 3 is a flowchart showingoperations of the memory interface circuit 100 according to the firstembodiment. As shown in FIG. 3, operations of the memory interfacecircuit 100 are broadly classified into an initialization phase 200 andnormal operation phases (first phase 201 through fourth phase 204). Theinitialization phase 200 initializes the values tA through tG in theregister file. The normal operation phases (first phase 201 throughfourth phase 204) write and read normal data. In addition, the normaloperation phases (first phase 201 through fourth phase 204) adjust thevalues tA through tG in the register file during data writing orwriting. The first phase 201 through the fourth phase 204 are looped.

The initialization phase 200 will be described. FIG. 4 is a flowchartshowing operations in the initialization phase 200 according to thefirst embodiment. As shown in FIG. 4, the initialization phase 200performs a first initialization process 300, a second initializationprocess 400, and a third initialization process 500.

The first initialization process 300 will be described. FIG. 5 is aflowchart showing operations in the first initialization process 300.The first initialization process 300 supplies initial values for theleft loopback fail value tA and the left loopback slot tB. Thesemiconductor device 120 is reset until the initialization phase 200starts. In this state, the register control portion 42 waits to bereleased from the reset state (phase 301).

When the reset state is released, the register control portion 42supplies temporary initial values for tA through tG to the register file45 (phase 302). The temporary initial values for tA through tG may bepredetermined. Alternatively, the register control portion 42 maydetermine temporary initial values for tA through tG in accordance withthe input delay control signal DCS. Thereafter, a first buffer controlsignal SB1 enables the write data output buffer 21 and the strobe signaloutput buffer 23. A second buffer control signal SB2 enables the readdata input buffer 22 and the strobe signal input buffer 24. The writedata output buffer 21, the read data input buffer 22, the strobe signaloutput buffer 23, and the strobe signal input buffer 24 remain enabledacross the first initialization process 300 and the secondinitialization process 400.

Control is then passed to a process that supplies an initial value forthe left loopback slot tB. The register control portion 42 operates thedelay selection portion 44 in accordance with the delay control signalDCS, reads the temporary initial value for the left loopback slot tBfrom the register file 45, and assumes the temporary initial value to bea delay value for the RDLL 32. The external circuit 110 supplies testdata through the write data signal line 51. Similarly to the write dataWD or the read data RD, the test data is supplied as burst data with aspecified burst length. The test data is supplied as N sets ofsuccessively supplied burst data, where N is 2 or larger integer. Thetest data is looped back to the read data latch 11 through the writedata output buffer 21 and the read data input buffer 22. At the sametime, the test data is also supplied to the expected value acquisitionlatch 12. That is, the loopback test is performed while the leftloopback slot tB is set to the RDLL 32.

The read data latch 11 latches the looped-back test data insynchronization with the delayed read strobe signal RDQS_d from the RDLL32. The read data latch 11 outputs the latched data as the result valueval1 to the comparator 41.

The expected value acquisition latch 12 latches the test data insynchronization with the clock signal CLK. The expected valueacquisition latch 12 outputs the latched data as the expected value val2to the comparator 41.

The comparator 41 compares the result value val1 with the expected valueval2. The comparator 41 repeats the comparison N times on the N sets ofburst data and outputs N comparison results. The number of repetitions Nmay be defined as any value as far as the value can reflect theinstability of a comparison result due to jitter components (phase 303).

The register control portion 42 evaluates a comparison result from thecomparator 41. If the comparison repeated N times results in ALL-PASS,the register control portion 42 updates the value of the left loopbackslot tB in the register file 45 to a value one step earlier than thetemporary initial value (phase 304). Control returns to phase 303 afterthe value of the left loopback slot tB is updated. At phase 303, theregister control portion 42 assumes the updated value of the leftloopback slot tB to be the delay value for the RDLL 32. Phases 303 and304 are repeated until the register control portion 42 finds a delayvalue that causes at least one of N comparison results to be FAIL. It ispossible to provide the minimum delay value in the period D3 as aninitial value for the left loopback slot tB.

The temporary initial value for the left loopback slot tB might cause acomparison result of ONE-FAIL. In this case, it can be assumed that thetemporary initial value for the left loopback slot tB is set to be tooearly. As a workaround, the temporary initial value for the leftloopback slot tB is set to be later and the first initialization process300 is performed again. It is possible to set an appropriate initialvalue for the left loopback slot tB.

There might be a case where the comparison only results in ALL-PASS evenif the value of the left loopback slot tB is set back to the minimumavailable value for the RDLL 32. In this case, the minimum availablevalue for the RDLL 32 can be supplied as a value for the left loopbackslot tB. The first initialization process 300 can be performed again bychanging the number of repetitions or test data.

Control is then passed to a process that supplies an initial value forthe left loopback fail value tA. The register control portion 42operates the delay selection portion 44 in accordance with the delaycontrol signal DCS, reads the temporary initial value for the leftloopback fail value tA from the register file 45, and assumes thetemporary initial value to be a delay value for the RDLL 32. In thisstate, the comparator 41 compares N sets of successively supplied burstdata (test data) similarly to phase 303 (phase 305). That is, theloopback test is performed while the left loopback fail value tA is setto the RDLL 32.

The register control portion 42 evaluates a comparison result from thecomparator 41. If at least one of N comparison operations results inPASS, the register control portion 42 updates the value of the leftloopback fail value tA in the register file 45 to a value one stepearlier than the temporary initial value (phase 306). Control returns tophase 305 after the value of the left loopback fail value tA is updated.At phase 305, the register control portion 42 assumes the updated valueof the left loopback fail value tA to be the delay value for the RDLL32. Phases 305 and 306 are repeated until the register control portion42 finds a delay value that causes N comparison results to be ALL-FAIL.It is possible to provide the maximum delay value in the period D1 forthe left loopback fail value tA.

The following describes a delay value specified for the RDLL 32 in thefirst initialization process 300. The read data latch 11 is assumed tolatch test data looped back at the timing (rising or falling) fortransition of the delayed write strobe signal WDQS_d. FIG. 6 is a timingchart exemplifying signal timings in the first initialization process300. Basically, it is necessary to search the vicinity of a risingtiming T1 for the clock signal CLK in order to settle initial values forthe left loopback fail value tA and the left loopback slot tB. However,the RDLL 32 delays the write strobe signal WDQS to generate the delayedwrite strobe signal WDQS_d. The WDLL 31 provides the write strobe signalWDQS with a delay of 90 degrees from the clock signal CLK. It isphysically impossible for the RDLL 32 to set back the phase of the writestrobe signal WDQS. No search is available around the timing T1 underthe existing conditions.

As a workaround, the RDLL 32 greatly delays the phase of the writestrobe signal WDQS and generates the delayed write strobe signal WDQS_dapproximately one cycle later than the clock signal CLK. The delayedwrite strobe signal WDQS_d can rise at around the timing T1. As aresult, the read data latch 11 can latch the looped-back test data (Datain FIG. 6) at around the timing T1. The left loopback fail value tA andthe left loopback slot tB each have a relatively large value such asapproximately 270 degrees.

The second initialization process 400 will be described. FIG. 7 is aflowchart showing operations in the second initialization process 400.Control is first passed to a process that sets an initial value for theright loopback slot tC. The register control portion 42 operates thedelay selection portion 44 in accordance with the delay control signalDCS, reads the temporary initial value for the right loopback slot tCfrom the register file 45, and assumes the temporary initial value to bea delay value for the RDLL 32. In this state, the comparator 41 comparesN sets of successively supplied burst data (test data) similarly tophase 303 of the first initialization process 300 (phase 401). That is,the loopback test is performed while the right loopback slot tC is setto the RDLL 32.

The register control portion 42 evaluates a comparison result from thecomparator 41. If N comparison operations result in ALL-PASS, theregister control portion 42 updates the value of the right loopback slottC in the register file 45 to a value one step later than the temporaryinitial value (phase 402). Control returns to the phase 401 after thevalue of the right loopback slot tC is updated. At phase 401, theregister control portion 42 assumes the updated value of the rightloopback slot tC to be the delay value for the RDLL 32. Phases 401 and402 are repeated until the register control portion 42 finds a delayvalue that causes N comparison results to be ONE-FAIL. It is possible toprovide the maximum delay value in the period D3 for the right loopbackslot tC.

The temporary initial value for the right loopback slot tC might cause acomparison result of ONE-FAIL. In this case, it can be assumed that thetemporary initial value for the right loopback slot tC is set to be toolate. As a workaround, the temporary initial value for the rightloopback slot tC is set to be earlier and the second initializationprocess 400 is performed again. It is possible to determine anappropriate initial value for the right loopback slot tC.

Control is then passed to a process that supplies an initial value forthe right loopback fail value tD. The register control portion 42operates the delay selection portion 44 in accordance with the delaycontrol signal DCS, reads the temporary initial value for the rightloopback fail value tD from the register file 45, and assumes thetemporary initial value to be a delay value for the RDLL 32. In thisstate, the comparator 41 compares N sets of successively supplied burstdata (test data) similarly to phase 401 (phase 403). That is, theloopback test is performed while the right loopback fail value tD is setto the RDLL 32.

The register control portion 42 evaluates a comparison result from thecomparator 41. If N comparison operations result in ONE-PASS, theregister control portion 42 updates the value of the right loopback failvalue tD in the register file 45 to a value one step later than thetemporary initial value (phase 404). Control returns to phase 403 afterthe value of the right loopback fail value tD is updated. At phase 403,the register control portion 42 assumes the updated value of the rightloopback fail value tD to be the delay value for the RDLL 32. Phases 403and 404 are repeated until the register control portion 42 finds a delayvalue that causes N comparison results to be ALL-FAIL. It is possible toprovide the maximum delay value in the period D5 for the right loopbackfail value tD.

The following describes a delay value specified for the RDLL 32 in thesecond initialization process 400. The read data latch 11 is assumed tolatch test data looped back at the timing (rising or falling) fortransition of the delayed write strobe signal WDQS_d. FIG. 8 is a timingchart exemplifying signal timings in the second initialization process400. Basically, as shown in FIG. 8, it is necessary to search thevicinity of a rising timing T2 for the clock signal CLK in order tosettle initial values for the right loopback slot tC and the rightloopback fail value tD. However, the RDLL 32 delays the write strobesignal WDQS to generate the delayed write strobe signal WDQS_d. The WDLL31 provides the write strobe signal WDQS with a delay of 90 degrees fromthe clock signal CLK. The delayed write strobe signal WDQS_d can rise ataround the timing T2 if the RDLL 32 further delays the phase of thewrite strobe signal WDQS. As a result, the read data latch 11 can latchthe looped-back test data (Data in FIG. 8) at around the timing T2.

The right loopback slot tC and the right loopback fail value tD eachhave a value of approximately 90 degrees. According to theconfiguration, values of the right loopback slot tC and the rightloopback fail value tD are smaller than those of the left loopback failvalue to and the left loopback slot tB.

The third initialization process 500 will be described. FIG. 9 is aflowchart showing operations in the third initialization process 500.The third initialization process 500 writes test data supplied from theexternal circuit 110 to the memory device 130. The data to be written ispreviously latched as an expected value. The written data is then read.The read data is latched so that it is compared with the expected value.The comparator 41 compares the two pieces of latched data with eachother.

Control is then passed to a process that supplies an initial value forthe estimated left slot value tE. The semiconductor device 120 writesthe test data. The first buffer control signal SB1 enables the writedata output buffer 21 and the strobe signal output buffer 23. The secondbuffer control signal SB2 disables the read data input buffer 22 and thestrobe signal input buffer 24.

The external circuit 110 outputs the test data to the write data outputbuffer 21. The test data is written to the memory device 130 inaccordance with the write strobe signal WDQS supplied through a strobesignal line 72. At the same time, the test data is also supplied to theexpected value acquisition latch 12. The expected value acquisitionlatch 12 latches the test data as the expected value val2 insynchronization with the clock signal CLK.

The semiconductor device 120 then reads the test data. The second buffercontrol signal SB2 enables the read data input buffer 22 and the strobesignal input buffer 24. The first buffer control signal SB1 disables thewrite data output buffer 21 and the strobe signal output buffer 23.

The register control portion 42 operates the delay selection portion 44in accordance with the delay control signal DCS, reads the temporaryinitial value for the estimated left slot value tE from the registerfile 45, and assumes the temporary initial value to be a delay value forthe RDLL 32. the memory interface circuit is supplied with the test datawritten to the memory device 130 through the data signal line 71.Similarly to the read data RD, the test data is supplied as burst datahaving a specified burst length. The test data is supplied as N sets ofsuccessively supplied burst data.

The read test data is supplied to the read data latch 11 through theread data input buffer 22. The read data latch 11 latches the read testdata as the result value val1 in synchronization with the delayed readstrobe signal RDQS_d supplied from the RDLL 32.

The comparator 41 compares the result value val1 with the expected valueval2. The comparator 41 repeats the comparison N times on the N sets oftest data and outputs N comparison results (phase 501).

If the comparison repeated N times results in ALL-PASS, the registercontrol portion 42 updates the value of the estimated left slot value tEin the register file 45 to a value one step earlier than the temporaryinitial value (phase 502). Control returns to the phase 501 after thevalue of the estimated left slot value tE is updated. At phase 501, theregister control portion 42 assumes the updated value of the estimatedleft slot value tE to be the delay value for the RDLL 32. Phases 501 and502 are repeated until the register control portion 42 finds a delayvalue that causes N comparison results to be ONE-FAIL. It is possible toprovide the minimum delay value in the period D3 for the estimated leftslot value tE.

The temporary initial value for the estimated left slot value tE mightcause a comparison result of ONE-FAIL. In this case, the same workaroundas described for the right loopback slot tC may be used. That is, thetemporary initial value for the estimated left slot value tE is set tobe earlier. The third initialization process 500 is performed again. Itis possible to determine an appropriate initial value for the estimatedleft slot value tE.

Control is then passed to a process that supplies an initial value forthe estimated right slot value tF. The register control portion 42controls the delay selection portion 44 to supply the RDLL 32 with thetemporary initial value for the estimated right slot value tF in theregister file 45. In this state, the comparator 41 compares N sets ofsuccessively supplied test data similarly to phase 501 (phase 503).

If N comparison operations result in ALL-PASS, the register controlportion 42 updates the value of the estimated right slot value tF in theregister file 45 to a value one step later than the temporary initialvalue (phase 504). Control returns to the phase 503 after the value ofthe estimated right slot value tF is updated. The register controlportion 42 then assumes the updated value of the estimated right slotvalue tF to be the delay value for the RDLL 32. Phases 503 and 504 arerepeated until the register control portion 42 finds a delay value thatcauses N comparison results to be ONE-FAIL. It is possible to providethe maximum delay value in the period D3 for the estimated right slotvalue tF.

The register control portion 42 then calculates an initial value for theread delay value tG to be used for a normal read operation (phase 505).The read delay value tG to be calculated is expressed by the followingequation (1).tG=(tE+tF)/2  (1)

The initialization phase 200 has been completed. The initial values arespecified for the values to through tG in the register file 45.

The following describes a delay value specified for the RDLL 32 in thethird initialization process 500. The estimated left slot value tE isconfigured to be relatively large similarly to the first initializationprocess 300. The estimated right slot value tF is configured to besmaller than the estimated left slot value tE similarly to the secondinitialization process 400.

The following describes the normal operation phases (first phase 201through fourth phase 204). The first phase 201 through the fourth phase204 are looped. The description below applies immediately aftercompletion of the initialization phase 200 for simplicity.

The first phase 201 will be described. FIG. 10 is a flowchart showingoperations in the first phase 201. The external circuit 110 determineswhether the semiconductor device 120 is requested to perform a writeoperation (phase 601). The external circuit 110 transfers adetermination result to the register control portion 42 using the delaycontrol signal DCS.

The register control portion 42 controls the delay selection portion 44to supply the RDLL 32 with an initial value for the read delay value tGif it is determined that the semiconductor device 120 is not requestedto perform a write operation, that is, during reading. Therefore, theRDLL 32 provides the read data RD with a delay corresponding to theinitial value for the read delay value tG (phase 602). A normal readoperation is performed using the read delay value tG.

On the other hand, a loopback test is performed if it is determined thatthe semiconductor device 120 is requested to perform a write operation,that is, during writing. The register control portion 42 controls thedelay selection portion 44 to supply the RDLL 32 with an initial valuefor the left loopback fail value to in the register file 45. The firstbuffer control signal SB1 enables the write data output buffer 21 andthe strobe signal output buffer 23. The second buffer control signal SB2enables the read data input buffer 22 and the strobe signal input buffer24. The write data output buffer 21, the read data input buffer 22, thestrobe signal output buffer 23, and the strobe signal input buffer 24remain enabled during writing at the first phase 201 through the fourthphase 204.

The external circuit 110 supplies the write data WD to the memoryinterface circuit 100. The write data WD is written to the memory device130 and is latched as the expected value val2 by the expected valueacquisition latch 12. The write data WD is looped back to the read datalatch 11. The looped-back read data RD is latched as the result valueval1. The comparator 41 compares the result value val1 with the expectedvalue val2. The comparator 41 repeats the comparison on multiple piecesof write data (phase 603).

The register control portion 42 references the comparison result. Thecomparison result may be assumed to be ALL-FAIL since the RDLL 32 issupplied with the initial value for the left loopback fail value tA.However, the comparison might result in ONE-PASS instead of ALL-FAIL dueto a variation in characteristics or jitters of the semiconductor device120. The above-mentioned assumption is negated if the comparison resultsin ONE-PASS. Further, the comparison might result in ONE-PASS if nochange is detected in the write data WD. Also in this case, theabove-mentioned assumption is negated.

There might be a case where the above-mentioned assumption is negated.In this case, the left loopback fail value tA may be considered to shiftto a value earlier than the initial value due to a variation in thecharacteristics of the semiconductor device 120. As a result, the leftloopback slot tB may be also considered to shift to a value earlier thanthe initial value similarly. If the comparison results in ONE-PASS, theregister control portion 42 updates the left loopback slot tB to a valueone step earlier (phase 604). Control then proceeds to step 202 b of thesecond phase 202 in order to confirm whether the left loopback slot tBis valid.

If the comparison results in ALL-FAIL according to the above-mentionedassumption, the register control portion 42 maintains the left loopbackfail value to and the left loopback slot tB unchanged. Control thenproceeds to step 202 a of the second phase 202.

The second phase 202 will be described. FIG. 11 is a flowchart showingoperations in the second phase 202. The following describes phases 701through 704 starting from step 202 a where the assumption in the firstphase 201 is correct. The phases 701 and 702 are equal to the phases 601and 602 and a description is omitted.

A loopback test is performed if it is determined that the semiconductordevice 120 is requested to perform a write operation, that is, duringwriting. The register control portion 42 controls the delay selectionportion 44 to supply the RDLL 32 with the initial value for the leftloopback slot tB maintained in the first phase 201 as is. The firstbuffer control signal SB1 enables the write data output buffer 21 andthe strobe signal output buffer 23. The second buffer control signal SB2enables the read data input buffer 22 and the strobe signal input buffer24.

At the same time, the external circuit 110 supplies the write data WD tothe memory interface circuit 100. The write data WD is written to thememory device 130 and is latched as the expected value val2 by theexpected value acquisition latch 12. The write data WD is looped back tothe read data latch 11. The looped-back read data RD is latched as theresult value val1. The comparator 41 compares the result value val1 withthe expected value val2. The comparator 41 repeats the comparison onmultiple pieces of write data (phase 703).

The register control portion 42 references the comparison result. TheRDLL 32 is supplied with the initial value for the left loopback slottB. Therefore, the comparison result from the comparator 41 may beassumed to be ALL-PASS. However, the comparison might result in ONE-FAILinstead of ALL-PASS due to a variation in characteristics or jitters ofthe semiconductor device 120. The above-mentioned assumption is negatedif the comparison results in ONE-FAIL.

There might be another case where the above-mentioned assumption isnegated. In this case, the left loopback slot tB may be considered toshift to a value later than the initial value due to a variation in thecharacteristics of the semiconductor device 120. As a result, theestimated left slot value tE may be also considered to shift to a valuelater than the initial value similarly. If the comparison results inONE-FAIL, the left loopback slot tB is updated to a value one steplater. The left loopback slot tB is determined in this manner. It ispossible to suppose that the estimated left slot value tE also varieswith the left loopback slot tB. Accordingly, the estimated left slotvalue tE is also updated to a value one step later (phase 704).

The loopback test results in ALL-FAIL on the left loopback fail value tAat phase 603 in the first phase 201. The left loopback fail value tA isassumed to be correct and is maintained as is. The normal operationphase can be repeated to correct the left loopback fail value tA even ifit is shifted to an earlier value. That is, the procedure is repeatedfrom phase 603, step 202 a, phase 701, phase 703, and then to phase 704.As a result, the left loopback slot tB results in ALL-PASS at phase 703.The normal operation phase can be repeated to correct the left loopbackfail value tA even if it is shifted to a later value. That is, theprocedure is repeated from phase 603, phase 604, step 202 b, phase 705,phase 707, and then to phase 709. As a result, the left loopback failvalue tA results in ALL-PASS at phase 603. The effect of repeating thenormal operation phase is unchanged even if the left loopback fail valuetA is delayed one step at phase 704 in relation to the left loopbackslot tB.

The left loopback fail value tA, the left loopback slot tB, and theestimated left slot value tE are maintained unchanged if the comparisonresults in ALL-PASS according to the above-mentioned assumption. Controlthen proceeds to the third phase 203.

The following describes phases 705 through 709 starting from step 202 bwhere the assumption in the first phase 201 is incorrect. The phases 705and 706 are equal to the phases 601 and 602 and a description isomitted.

A loopback test is performed if it is determined that the semiconductordevice 120 is requested to perform a write operation, that is, duringwriting. The register control portion 42 controls the delay selectionportion 44 to supply the RDLL 32 with the initial value for the leftloopback slot tB in the register file 45. The value supplied to the leftloopback slot tB is one step earlier than the initial value at the firstphase. Similarly to the phase 703, the write data output buffer 21, theread data input buffer 22, the strobe signal output buffer 23, and thestrobe signal input buffer 24 are enabled.

At the same time, the external circuit 110 supplies the write data WD tothe memory interface circuit 100. The write data WD is written to thememory device 130 and is latched as the expected value val2 by theexpected value acquisition latch 12. The write data WD is looped back tothe read data latch 11. The looped-back read data RD is latched as theresult value val1. The comparator 41 compares the result value val1 withthe expected value val2. The comparator 41 repeats the comparison onmultiple pieces of write data (phase 707).

The register control portion 42 references the comparison result. TheRDLL 32 is supplied with the left loopback slot tB one step earlier thanthe initial value. Therefore, the comparison result may be assumed to beALL-PASS. However, the comparison might result in ONE-FAIL instead ofALL-PASS due to a variation in characteristics or jitters of thesemiconductor device 120. The above-mentioned assumption is negated ifthe comparison results in ONE-FAIL.

There might be still another case where the above-mentioned assumptionis negated. In this case, the left loopback slot tB can be assumed to beearlier than the value that should be specified originally. That is, thefirst phase 201 sets the left loopback slot tB one step earlier underthe influence of contingency due to jitters and therefore may beconsidered to be invalid. To cancel the process at the first phase 201,the register control portion 42 updates the left loopback slot tB to avalue one step later. Consequently, the left loopback slot tB isreturned to the initial value (phase 708).

The assumption at the first phase 201 might be also considered to beincorrect if no change is detected in the write data WD as describedabove. Also in this case, to cancel the process at the first phase 201,the register control portion 42 updates the left loopback slot tB to avalue one step later. It is also possible to correct insufficientassumption caused by the write data WD.

There might be a case where the above-mentioned assumption is correct.In this case, it may be considered valid that the first phase 201adjusted the left loopback slot tB one step earlier. The left loopbackfail value tA and the estimated left slot value tE are updated to valuesone step earlier in accordance with the process of adjusting the leftloopback slot tB one step earlier (phase 709). As a result, the leftloopback fail value tA, the left loopback slot tB, and the estimatedleft slot value tE can be set to proper values.

The third phase 203 will be described. FIG. 12 is a flowchart showingoperations in the third phase 203. The phases 801 and 802 are equal tothe phases 601 and 602 and a description is omitted.

A loopback test is performed if it is determined that the semiconductordevice 120 is requested to perform a write operation, that is, duringwriting. The register control portion 42 controls the delay selectionportion 44 to supply the RDLL 32 with the initial value for the rightloopback fail value tD. The first buffer control signal enables thewrite data output buffer 21 and the strobe signal output buffer 23. Thesecond buffer control signal enables the read data input buffer 22 andthe strobe signal input buffer 24.

At the same time, the external circuit 110 supplies the write data WD tothe memory interface circuit 100. The write data WD is written to thememory device 130 and is latched as the expected value val2 by theexpected value acquisition latch 12. The write data WD is looped back tothe read data latch 11. The looped-back read data RD is latched as theresult value val1. The comparator 41 compares the result value val1 withthe expected value val2. The comparator 41 repeats the comparison onmultiple pieces of write data (phase 803).

The register control portion 42 references the comparison result. TheRDLL 32 is supplied with the initial value for the right loopback failvalue tD. Therefore, the comparison result from the comparator 41 may beassumed to be ALL-FAIL. However, the comparison might result in ONE-PASSinstead of ALL-FAIL due to a variation in characteristics or jitters ofthe semiconductor device 120. The above-mentioned assumption is negatedif the comparison results in ONE-PASS. The comparison might also resultin ONE-PASS if no change is detected in the write data WD. Theabove-mentioned assumption is also negated in this case.

There might be yet another case where the above-mentioned assumption isnegated. In this case, the right loopback fail value tD may beconsidered to shift to a value later than the initial value due to avariation in the characteristics of the semiconductor device 120. As aresult, the right loopback slot tC may be also considered to shift to avalue later than the initial value similarly. If the comparison resultsin ONE-PASS, the right loopback slot tC is updated to a value one steplater (phase 804). Control then proceeds to step 204 b of the fourthphase 204 in order to confirm whether the right loopback fail value tDis value.

The right loopback fail value tD is maintained as the initial value ifthe comparison results in ALL-FAIL in accordance with the assumption.Control then proceeds to step 204 a of the fourth phase 204.

The fourth phase 204 will be described. FIG. 13 is a flowchart showingoperations in the fourth phase 204. The following describes phases 901through 904 starting from step 204 a where the assumption in the thirdphase 203 is incorrect. The phases 901 and 902 are equal to the phases601 and 602 and a description is omitted.

A loopback test is performed if it is determined that the semiconductordevice 120 is requested to perform a write operation, that is, duringwriting. The register control portion 42 controls the delay selectionportion 44 to supply the RDLL 32 with the initial value for the rightloopback slot tC maintained as is in the third phase 203. The firstbuffer control signal SB1 enables the write data output buffer 21 andthe strobe signal output buffer 23. The second buffer control signal SB2enables the read data input buffer 22 and the strobe signal input buffer24.

At the same time, the external circuit 110 supplies the write data WD tothe memory interface circuit 100. The write data WD is written to thememory device 130 and is latched as the expected value val2 by theexpected value acquisition latch 12. The write data WD is looped back tothe read data latch 11. The looped-back read data RD is latched as theresult value val1. The comparator 41 compares the result value val1 withthe expected value val2. The comparator 41 repeats the comparison onmultiple pieces of write data (phase 903).

The register control portion 42 references the comparison result. TheRDLL 32 is supplied with the initial value for the right loopback slottC. Therefore, the comparison result from the comparator 41 may beassumed to be ALL-PASS. However, the comparison might result in ONE-FAILinstead of ALL-PASS due to a variation in characteristics or jitters ofthe semiconductor device 120. The above-mentioned assumption is negatedif the comparison results in ONE-FAIL.

There might be still yet another case where the above-mentionedassumption is negated. In this case, the right loopback slot tC may beconsidered to shift to a value earlier than the initial value due to avariation in the characteristics of the semiconductor device 120. As aresult, the estimated right slot value tF may be also considered toshift to a value earlier than the initial value similarly. If thecomparison results in ONE-FAIL, the right loopback slot tC and theestimated right slot value tF are updated to values one step earlier(phase 904). Control then proceeds to phase 910.

The loopback test results in ALL-FAIL on the right loopback fail valuetD at phase 803 in the third phase 203. The right loopback fail value tDis assumed to be correct and is maintained as is. The normal operationphase can be repeated to correct the right loopback fail value tD evenif it is shifted to an earlier value. That is, the procedure is repeatedfrom phase 803, step 204 a, phase 901, phase 903, and then to phase 904.As a result, the right loopback slot tC results in ALL-PASS at phase903. The normal operation phase can be repeated to correct the rightloopback fail value tD even if it is shifted to a later value. That is,the procedure is repeated from phase 803, phase 804, step 204 b, phase905, phase 907, and then to phase 909. As a result, the right loopbackfail value tD results in ALL-FAIL at phase 803. The effect of repeatingthe normal operation phase is unchanged even if the right loopback failvalue tD is delayed one step at phase 904 in relation to the rightloopback slot tC.

The right loopback slot tC and the estimated right slot value tF may beconsidered to be correct if the comparison results in ALL-PASS accordingto the above-mentioned assumption. Accordingly, the right loopback failvalue tD, the right loopback slot tC, and the estimated right slot valuetF are maintained unchanged. Control then proceeds to phase 910.

The following describes phases 905 through 909 where the assumption inthe third phase 203 is incorrect. The phases 905 and 906 are equal tothe phases 601 and 602 and a description is omitted.

A loopback test is performed if it is determined that the semiconductordevice 120 is requested to perform a write operation, that is, duringwriting. The register control portion 42 controls the delay selectionportion 44 to supply the RDLL 32 with the initial value for the rightloopback slot tC in the register file 45. The value supplied to theright loopback slot tC is one step later than the initial value at thethird phase 203. Similarly to the phase 703, the write data outputbuffer 21, the read data input buffer 22, the strobe signal outputbuffer 23, and the strobe signal input buffer 24 are enabled.

At the same time, the external circuit 110 supplies the write data WD tothe memory interface circuit 100. The write data WD is written to thememory device 130 and is latched as the expected value val2 by theexpected value acquisition latch 12. The write data WD is looped back tothe read data latch 11. The looped-back read data RD is latched as theresult value val1. The comparator 41 compares the result value val1 withthe expected value val2. The comparator 41 repeats the comparison onmultiple pieces of write data (phase 907).

The register control portion 42 references the comparison result. TheRDLL 32 is supplied with the right loopback slot tC one step later thanthe initial value. Therefore, the comparison result from the comparator41 may be assumed to be ALL-PASS. However, the comparison might resultin ONE-FAIL instead of ALL-PASS due to a variation in characteristics orjitters of the semiconductor device 120. The above-mentioned assumptionis negated if the comparison results in ONE-FAIL.

There might be yet still another case where the above-mentionedassumption is negated. In this case, the right loopback slot tC can beassumed to be later than the value that should be specified originally.That is, the third phase 203 sets the right loopback slot tC one steplater under the influence of contingency due to jitters and thereforemay be considered to be invalid. To cancel the process at the thirdphase 203, the register control portion 42 updates the right loopbackslot tC to a value one step earlier. Consequently, the right loopbackslot tC is returned to the initial value (phase 908). Control thenproceeds to phase 910.

The assumption at the third phase 203 might be also considered to beincorrect if no change is detected in the write data WD as describedabove. Also in this case, to cancel the process at the third phase 203,the register control portion 42 updates the right loopback slot tC to avalue one step earlier. It is also possible to correct insufficientassumption caused by the write data WD.

There might be a case where the above-mentioned assumption is correct.In this case, it may be considered valid that the third phase 203adjusted the right loopback slot tC one step later. The right loopbackfail value tD and the estimated right slot value tF are updated tovalues one step later in accordance with the process of adjusting theright loopback slot tC one step later. The estimated left slot value tEmay be also assumed to similarly vary with the left loopback slot tB.Accordingly, the estimated left slot value tE is also updated one steplater (phase 909). As a result, the right loopback slot tC, the rightloopback fail value tD, and the estimated right slot value tF can be setto proper values. Control then proceeds to phase 910.

Finally, the read delay value tG is calculated based on the most recentvalues for the estimated left slot value tE and the estimated right slotvalue tF configured in the fourth phase and the equation (1) above(phase 910).

The above-mentioned steps loop back write data supplied during writing.As a result, the memory interface circuit 100 can keep the read delayvalue tG optimal. The memory interface circuit 100 eliminates the needto provide a period for calibrating read data timings. The memory devicecan be fast driven because the memory interface circuit 100 cancalibrate read data timings during normal write operations.

The configuration according to the embodiment does not need a circuitthat is used exclusively for read data latch timings in the memorysystem 1100 as shown in FIG. 24. Accordingly, the configuration canprovide the memory interface circuit with a circuit scale smaller thanfor memory interfaces of the related art.

A high-speed interface device needs to suppress variations incharacteristics. For this purpose, a large-footprint transistor is usedfor a function block such as latch related to data writing or reading.As a result, the memory system 1100 as shown in FIG. 24 features a largecircuit footprint because the system includes a large-scale block suchas the second data latch portion 1106. On the other hand, theconfiguration according to the embodiment does not need such alarge-scale block and therefore provides another advantage ofsuppressing the circuit scale.

The configuration must use the register portion. However, the registerportion 43 just needs to maintain the values to through tG and sufficesto use a small circuit configuration in the order of nanometers, forexample. By contrast, a large-scale block such as the second data latchportion 1106 requires a circuit scale in the order of micrometers, forexample. The register portion 43 poses no obstacle to suppressing thecircuit scale. Therefore, the memory interface circuit 100, if providedwith the register portion 43, can sufficiently reduce the circuit scalecompared to the related art.

Further, the memory system 1100 in FIG. 24 needs to matchcharacteristics between two systems, that is, the system including thefirst data latch portion 1103, the first variable delay portion 1104,and the first delay control portion 1105 and the system including thesecond data latch portion 1106, the second variable delay portion 1107,and the second delay control portion 1108. However, these blocks arephysically separated from each other. Actually, it is impossible tomatch characteristics between the two systems. A characteristicdifference between the two systems might undermine the reliability inthe long run even if the memory system 1100 adjusts timings. Theconfiguration according to the embodiment need not take this probleminto consideration because the configuration does not need a blockequivalent to the system including the second data latch portion 1106,the second variable delay portion 1107, and the second delay controlportion 1108.

In addition, the memory system 1100 shown in FIG. 24 needs to detect aread data toggle. The memory system 1100 cannot adjust timings if nodata is written to the memory device 1101 or data contains no toggle. Anadditional workaround against missing data toggle is needed. On theother hand, the configuration according to the embodiment performs aloopback test using write data and therefore is used with advantage evenif no data is written to the memory device 1101 or only data withouttoggle is available.

According to the configuration, various initial values in the registerfile 45 are configured during the initialization phase. At this time,the external circuit 110 supplies test data to the memory interfacecircuit 100. The test data is also output to the memory device 130.However, the test data is not written to the memory device because thememory device (DDR3 SDRAM) is write-inhibited during the initializationphase. The DDR3 SDRAM standards specify control over the write inhibitstate.

In other words, voltages vary at the data terminal 61 and the strobeterminal 62 of the semiconductor device 120 including the memoryinterface circuit 100 even during the initialization phase. A tester canbe used to easily measure a voltage at the data terminal 61 and thestrobe terminal 62. On the other hand, an ordinary memory controllerdoes not vary voltages at the data terminal 61 and the strobe terminal62 during the initialization phase or other cases than writing orreading. Accordingly, it is possible to determine whether the memoryinterface circuit 100 is included in the semiconductor device bymeasuring a voltage at the data terminal or the strobe terminal whenwrite and read operations are not performed.

Second Embodiment

The memory interface circuit according to the second embodiment will bedescribed. FIG. 14 is a circuit block diagram showing a configuration ofa semiconductor device 150 including a memory interface circuit 140according to the second embodiment. The semiconductor device 150 isconfigured by replacing the memory interface circuit 100 in thesemiconductor device 120 with the memory interface circuit 140. Thesemiconductor device 150 is otherwise configured similarly to thesemiconductor device 120 and a description is omitted.

The memory interface circuit 100 according to the first embodiment mustset the left loopback fail value tA, the left loopback slot tB, and theestimated left slot value tE to large values. As a result, the circuitscale of the RDLL 32 increases. On the other hand, the memory interfacecircuit 140 according to the second embodiment can supply the RDLL 32with the left loopback fail value tA, the left loopback slot tB, and theestimated left slot value tE that are smaller than those for the memoryinterface circuit 100.

The memory interface circuit 140 replaces the comparator 41 in thememory interface circuit 100 with a shifter comparator 47. The shiftercomparator 47 has a function that shifts the timing to compare theresult value val1 with the expected value val2. Specifically, theshifter comparator 47 compares a shifted result value val1 180 with theexpected value val2 latched by the expected value acquisition latch 12in accordance with the delay control signal DCS, for example. Theshifted result value val1 180 is generated by delaying the result valueval1 latched by the read data latch 11 as much as half a cycle (180degrees). The memory interface circuit 140 is otherwise configuredsimilarly to the memory interface circuit 100 and a description isomitted.

Operations of the memory interface circuit 140 will be described. FIG.15 is a flowchart showing operations of the memory interface circuit 140according to the second embodiment. The operations of the memoryinterface circuit 140 shown in FIG. 15 include an initialization phase210, a first phase 211, and a second phase 212 corresponding to theinitialization phase 200, the first phase 201, and the second phase 202of the memory interface circuit 100, respectively.

The initialization phase 210 will be described. FIG. 16 is a flowchartshowing operations in the initialization phase 210. As shown in FIG. 16,the initialization phase 210 replaces the first initialization process300 for the memory interface circuit 100 with a first initializationprocess 310. The following describes the first initialization process310 as a difference.

FIG. 17 is a flowchart showing operations in the first initializationprocess 310. The first initialization process 310 replaces phases 303and 305 for the memory interface circuit 100 with phases 313 and 315. Atphases 313 and 315, the RDLL 32 delays the phase of the write strobesignal WDQS approximately 90 degrees. FIG. 18 is a timing chartexemplifying signal timings in the first initialization process 310. TheRDLL 32 delays the rise (timing T4) of the delayed write strobe signalWDQS_d 90 degrees from the rise (timing T3) of the write strobe signalWDQS.

In this state, the shifter comparator 47 performs comparison accompaniedby a half-cycle delay as mentioned above. That is, the shiftercomparator 47 performs comparison using a value latched at the timing T5as the result value val1. This makes it possible to search for initialvalues for the left loopback fail value tA and the left loopback slottB. In this case, the left loopback fail value tA and the left loopbackslot tB are set to approximately 90 degrees. The other operations of thefirst initialization process 310 are similar to those of the firstinitialization process 300 and a description is omitted.

The first phase 211 will be described. FIG. 19 is a flowchart showingoperations in the first phase 211. The first phase 211 replaces phase603 in the first phase 201 for the memory interface circuit 100 withphase 613. At phase 613, the shifter comparator 47 performs comparisonaccompanied by a half-cycle delay similarly to phases 313 and 315 in thefirst initialization process 310. Also in this case, the left loopbackfail value tA and the left loopback slot tB are set to approximately 90degrees. The other operations of the first phase 211 are similar tothose of the first phase 201 and a description is omitted.

The second phase 212 will be described. FIG. 20 is a flowchart showingoperations in the second phase 212. The second phase 212 replaces phases703 and 707 in the second phase 202 for the memory interface circuit 100with phases 713 and 717, respectively. At phases 713 and 717, theshifter comparator 47 performs comparison accompanied by a half-cycledelay similarly to phases 313 and 315 in the first initializationprocess 310. Also in this case, the left loopback fail value tA, theleft loopback slot tB, and the estimated left slot value tE are set toapproximately 90 degrees. The other operations of the second phase 212are similar to those of the second phase 202 and a description isomitted.

The configuration can make the left loopback fail value tA, the leftloopback slot tB, and the estimated left slot value tE smaller thanthose for the memory interface circuit 100 according to the firstembodiment. As a result, the circuit area of the RDLL 32 can beprevented from increasing and the memory interface circuit 140 can beminiaturized.

Third Embodiment

The memory interface circuit according to the third embodiment will bedescribed. FIG. 21 is a circuit block diagram showing a configuration ofa semiconductor device 170 including a memory interface circuit 160according to the third embodiment. The semiconductor device 170 replacesthe memory interface circuit 100 of the semiconductor device 120 withthe memory interface circuit 160. The semiconductor device 170 isotherwise configured similarly to the semiconductor device 120 and adescription is omitted.

The memory interface circuit 160 replaces the WDLL 31 of the memoryinterface circuit 100 with a bypass WDLL 33. The memory interfacecircuit 160 also replaces the register file 45 with a register file 48.The bypass WDLL 33 has a function that bypasses and outputs the clocksignal CLK as is in accordance with the delay control signal DCS.

The register file 48 contains an initial value tH for the estimatedright slot value in addition to the other values contained in theregister file 45.

Operations of the memory interface circuit 160 according to the thirdembodiment will be described. FIG. 22 is a flowchart showing operationsof the memory interface circuit 160 according to the third embodiment.The initialization phase 220 performs the second initialization process400 and the third initialization process 500. The memory interfacecircuit 160 is void of the first initialization process 300 of thememory interface circuit 100.

After termination of the initialization phase 220, the register controlportion 42 controls the register portion 43 to store an initial valuefor the estimated right slot value tF as an initial value tH for theestimated right slot value (phase 205).

Third phase 203 and fourth phase 204 are then performed similarly to thememory interface circuit 100. That is, the memory interface circuit 160is void of first phase 201 and second phase 202 compared to the memoryinterface circuit 100. Third phase 203 and fourth phase 204 areperformed under the assumption that the initial value tH for theestimated right slot value is unchanged.

The register control portion 42 then compares the most recent estimatedright slot value tF found through third phase 203 and fourth phase 204with the initial value tH for the estimated right slot value (phase206). In this manner, the register control portion 42 determines howmany steps the estimated right slot value tF differs from the initialvalue tH for the estimated right slot value. The register controlportion 42 is previously supplied with a reference step count M used asthe determination reference.

Control returns to third phase 203 and the process is repeated if adifference between the estimated right slot value tF and the initialvalue tH for the estimated right slot value is fewer than M steps.Control proceeds to phase 207 if a difference between the estimatedright slot value tF and the initial value tH for the estimated rightslot value is M steps or more.

At phase 207, the register control portion 42 determines whether theexternal circuit 110 permits initialization of the memory interfacecircuit. If the initialization is not permitted, control returns to thethird phase and the process is repeated. If the initialization ispermitted, control returns to the initialization phase 210 and theinitialization is performed.

The memory interface circuit 160 focuses on a boundary to the right ofthe slot and compares a change in the delay amount during normal memoryaccess operation with the initial value. The memory interface circuit160 checks if a comparison result is within the allowable range, thatis, if a difference between the delay amount and the initial value isfewer than M steps. As a result, the calibration is performed if thecomparison result is outside the allowable range.

The estimated left slot value tE needs to be determined in order tocalculate the read delay value tG. The estimated left slot value tE canbe determined by performing the initialization phase 200 according tothe first embodiment, for example. The left loopback fail value tA andthe left loopback slot tB needs to be determined in order to determinethe estimated left slot value tE. However, no write data is neededduring the initialization phase. A write strobe signal may be generatedfreely.

That is, the bypass WDLL 33 can output the write strobe signal WDQSwithout delaying the clock signal CLK to determine the left loopbackfail value tA, the left loopback slot tB, and the estimated left slotvalue tE. In this case, the RDLL 32 just needs to supply a slight delayamount to the write strobe signal WDQS in order to search for the leftloopback fail value tA, the left loopback slot tB, and the estimatedleft slot value tE. Accordingly, the delay amount to be set to the RDLL32 can be limited more than the first embodiment.

The configuration need not give special consideration to the leftloopback fail value tA, the left loopback slot tB, and the estimatedleft slot value tE that must be set to large values. Similarly to thesecond embodiment, the third embodiment can suppress the circuit scaleof the RDLL 32.

Fourth Embodiment

A memory system 1000 according to the fourth embodiment will bedescribed. FIG. 23 is a block diagram showing a configuration of thememory system 1000 according to the fourth embodiment. The memory system1000 includes a semiconductor device 190 and a memory device 130. Thememory system 1000 is configured as an applied device including thesemiconductor device 190.

The semiconductor device 190 includes a memory interface circuit 180 andthe external circuit 110. The external circuit 110 includes a controlcircuit 111 and a CPU 112. The external circuit 110 may include thecontrol circuit 111 and other function blocks 113. The memory interfacecircuit 180 is equivalent to any one of the memory interface circuits100, 140, and 160.

The CPU 112 controls overall operations of the semiconductor device 190.The control circuit 111 controls the memory interface circuit 180 andthe memory device 130 and monitors their states at the same time.

The control circuit 111 monitors states of the memory interface circuit180 and the memory device 130 and determines whether the calibrationneeds to be retried. Specifically, the control circuit 111 monitorsvalues in the register file using the delay monitor signal DMS. If aregister file value exceeds the reference range, the control circuit 111outputs an interrupt signal 114 to the CPU 112 to issue an interruptrequest to the CPU 112.

The CPU 112 receives the interrupt signal 114 and allocates a memoryspace for the calibration to the memory space in the CPU 112. If thememory bandwidth is insufficient, the CPU 112 temporarily limits thefunctions to decrease the memory bandwidth and issues an intermittentcalibration request to the control circuit 111.

When receiving the intermittent calibration request, the control circuit111 performs the initialization (intermittent calibration) on the memoryinterface circuit 180 according to the same procedure as theinitialization phase 200 in the first embodiment while no memory accessoccurs.

The control circuit 111 detects termination of the intermittentcalibration on the memory interface circuit 180 using the delay monitorsignal DMS. After the detection, the control circuit 111 issues theinterrupt signal 114 to notify the CPU 112 of termination of theintermittent calibration.

The CPU 112 is notified of termination of the intermittent calibrationand frees the memory space allocated to the intermittent calibration.The CPU 112 then returns to the normal operation.

The configuration can appropriately initialize the memory interfacecircuit 180 in accordance with states of the memory interface circuit180. The memory system can perform operations in accordance with even adrastic change in states such as the temperature.

The configuration temporarily separates the memory space and the memorybandwidth from the memory system 1000 in order to perform theintermittent calibration. Memory access operations are not hindered eventhough the throughput temporarily decreases during the intermittentcalibration. Memory access operations can be stabilized withoutsacrifice of memory access acceleration.

The present invention is not limited to the above-mentioned embodimentsbut may be otherwise variously embodied within the spirit and scope ofthe invention. For example, WDLL and RDLL can be replaced by otherblocks if delay values are adjustable.

It is to be distinctly understood that the semiconductor device 190according to the fourth embodiment can be installed in not only thememory system but also other applied devices.

What is claimed is:
 1. A semiconductor device comprising: a dataterminal to be coupled to a memory device; a data output buffer coupledto the data terminal on a first signal pass to write data to the memorydevice; and a data input buffer coupled to the data terminal on a secondsignal pass to read data from the memory device, and coupled to the dataoutput buffer on a loop back pass; wherein both the data output bufferand the data input buffer are enabled when data is written to the memorydevice.
 2. The semiconductor device according to claim 1, furthercomprising a strobe terminal to be coupled to a memory device; a strobesignal output buffer coupled to the strobe terminal on a third signalpass to output a write strobe signal to the memory device; and a strobesignal input buffer coupled to the strobe terminal on a fourth signalpass to receive a read strobe signal from the memory device, and coupledto the strobe signal output buffer on another loop back pass; whereinboth the strobe signal output buffer and the strobe signal input bufferare enabled when data is written to the memory device.
 3. Thesemiconductor device according to claim 2, further comprising a firstlatch coupled to the data input buffer on the second signal pass andcoupled to the strobe signal input buffer on a fourth signal pass; and asecond latch coupled to the first signal pass and the third signal pass.4. The semiconductor device according to claim 3, further comprising aread delay-locked loop coupled between the first latch and the strobesignal input buffer on a fourth signal pass; and a write delay-lockedloop coupled to the strobe signal output buffer on the third signalpass.
 5. The semiconductor device according to claim 4, furthercomprising a comparator coupled to the first and second latches.
 6. Thesemiconductor device according to claim 5, further comprising a registerportion configured to store a delay value; a delay selection portioncoupled to the read delay-locked loop and the register portion; and aregister control portion coupled to the register portion, the delayselection portion, and the comparator.
 7. The semiconductor deviceaccording to claim 1, further comprising a circuit configured to outputcontrol signals to the data output buffer and the data input buffer toenable the data output buffer and the data input buffer.